On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks

被引:4
|
作者
de Souza, Michelly [1 ]
Doria, Rodrigo T. [1 ]
Trevisoli, Renan [2 ]
Barraud, Sylvain [3 ]
Pavanello, Marcelo A. [1 ]
机构
[1] Ctr Univ FEI, BR-09850901 Sao Bernardo Do Campo, Brazil
[2] Univ Fed ABC, UFABC, BR-09210580 Santo Andre, SP, Brazil
[3] LETI Commissariat Energie Atom & Energies Alterna, F-38054 Grenoble, France
基金
巴西圣保罗研究基金会;
关键词
Transistors; Doping; Threshold voltage; Logic gates; Voltage measurement; Linearity; Silicon; Junctionless nanowire transistors; MOSFET; analog circuits; common-drain amplifier; common-source amplifier; source-follower; silicon-on-insulator;
D O I
10.1109/TNANO.2021.3058885
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work an evaluation of analog building blocks using junctionless nanowire transistors is presented. This analysis has been carried out through experimental measurements of junctionless nMOS transistors configured as two amplifier stages composed by single transistors, namely the common-source and the common-drain amplifiers. The performance of junctionless devices is evaluated as a function of channel length, nanowire width, doping concentration and bias condition, taking as figures of merit the voltage gain, linearity and, in the case of the common drain amplifier, the input voltage range. The obtained results indicate that these two basic analog blocks can be benefitted by the use of junctionless devices, providing nearly ideal voltage gain when configured as common-drain amplifier, and improvement on voltage gain and linearity with device narrowing in the case of the common-source amplifier.
引用
收藏
页码:234 / 242
页数:9
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