Study of copper-phthalocyanine and pentacene film growth on transferred graphene: The influence of polymer residues

被引:12
|
作者
Shi, Bi-Yun [1 ]
Dou, Wei-Dong [1 ]
机构
[1] Shaoxing Univ, Phys Dept, Shaoxing 312000, Peoples R China
基金
中国国家自然科学基金;
关键词
Organic thin film; Film growth; Polymethylmethacrylate residue; Graphene; EPITAXIAL-GROWTH; IDENTIFICATION; SURFACE; LAYER;
D O I
10.1016/j.tsf.2017.07.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wet transferring of chemical vapor deposition (CVD) graphene with the assistance of poly(methylmethacrylate) (PMMA) usually leaves polymer contaminations onto graphene surface. Knowledge about the influence of PMMA residues on organic film growth properties is crucial for graphene-related organic electronic devices. In this study, we investigate growth properties of coper-phthalocyanine (CuPc) and pentacene on PMMA contaminated graphene substrate. Grain size and morphologies of CuPc and pentacene films were found to be governed by the density of PMMA residues on graphene. Nevertheless, the molecular packing structures of CuPc and pentacene respond differently with the density with PMMA residues. CuPc molecules tend to nucleated into grains with molecular pi-pi stacking parallel to graphene surface, which is irrespective of the PMMA residues. Whereas the packing behavior of pentacene on PMMA-transferred CVD graphene is sensitive to the density of PMMA residues. Molecular pi-pi stacking perpendicular to graphene is observed when pentacene was deposited onto as-transferred graphene. Parallel mode was observed only on the substrates without PMMA residues. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:723 / 729
页数:7
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