Metal-semiconductor transition in nonstoichiometric vanadium dioxide films

被引：28

作者：

Berezina, O. Ya. ^{[1
]}

Velichko, A. A. ^{[1
]}

Lugovskaya, L. A. ^{[1
]}

Pergaunent, A. L. ^{[1
]}

Stefanovich, G. B. ^{[1
]}

机构：

[1] Petrozavodsk State Univ, Petrozavodsk 185910, Karelia, Russia

来源：

INORGANIC MATERIALS | 2007年 / 43卷 / 05期

关键词：

D O I：

10.1134/S0020168507050123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Undoped and tungsten-doped nonstoichiometric vanadium dioxide films have been prepared by a modified sol-gel process, and the effect of synthesis conditions on the parameters of the metal-semiconductor transition in the films has been studied. In particular, it is shown that the temperature of the metal-semiconductor transition in vanadium dioxide decreases with increasing W content and that no phase transition occurs at doping levels above 6 at %. The composition of the films has been evaluated by x-ray diffraction, and their surface morphology has been examined by atomic force microscopy. The parameters of electrical switching in the films can be stabilized by reducing the transition temperature.

引用

页码：505 / 511

页数：7

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