Noise Modeling of Source Inductive Degeneration Low Noise Amplifier in 0.18-μm CMOS Technology

被引：0
|
作者：
Kurniawan, Taufiq Alif [1 ]
Wibisono, Gunawan [1 ]
机构：
[1] Univ Indonesia, Dept Elect Engn, Depok, Indonesia
来源：
2013 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION, NETWORKS AND SATELLITE (COMNETSAT) | 2013年
关键词：
noise; RF; LNA; 0.18-mu m CMOS Technology; DESIGN; LNA;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a mathematical modeling of noise performance in source inductive degeneration topology which widely used in narrow band amplifier. The proposed model is conducted by utilizing a small-signal MOSFET model to generate the effective transconductance of circuits. The performance of noise figure can be preserved by selecting the device width while preserving a stable bias voltages and maintaining the device length unchanged. Using the mathematical model, a low noise amplifier is designed and obtain the noise figure of 2.5-dB, an remarkable figure of merit among reported LNAs in 0.18-mu m CMOS technology.
引用
收藏
页码：15 / 19
页数：5
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