A 5.25-GHz low noise amplifier for WMAN applications in a 0.18-μ m CMOS technology

被引：0
|
作者：
Kalantari, F [1 ]
Masoumi, N [1 ]
Saeidi, R [1 ]
机构：
[1] Univ Tehran, Dept Elect Engn, Tehran, Iran
来源：
17TH ICM 2005: 2005 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS | 2005年
关键词：
amplifier noise; induced gate noise; low noise amplifier; noise figure; random noise;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 5.25-GHz low noise amplifier (LNA), has been proposed for use in a receiver architecture for IEEE802.16a WMAN. The targeted frequency band is the un-licensed band UN11 5 GHz. The amplifier provides voltage gain of 16 dB with a noise figure of only 1.8 dB, the IIP3 is +2-dBm and the reverse isolation is about -15 dB. Using a 0.18 mu m CMOS process, the LNA dissipates 7.8 mW from a 1.8V supply voltage. In this paper, we present an analysis of the LNA architecture, including the effects of induced gate noise in MOS devices.
引用
收藏
页码：122 / 127
页数：6
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