Spin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots

被引：28

作者：

Debus, J. ^{[1
]}

Shamirzaev, T. S. ^{[2
,3
]}

Dunker, D. ^{[1
]}

Sapega, V. F. ^{[4
,5
]}

Ivchenko, E. L. ^{[4
]}

Yakovlev, D. R. ^{[1
,4
]}

Toropov, A. I. ^{[2
]}

Bayer, M. ^{[1
,4
]}

机构：

[1] Tech Univ Dortmund, D-44227 Dortmund, Germany

[2] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Ural Fed Univ, Ekaterinburg 620002, Russia

[4] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] St Petersburg State Univ, Spin Opt Lab, St Petersburg 198504, Russia

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

SEMICONDUCTORS; SUPERLATTICES; NANOCRYSTALS;

D O I：

10.1103/PhysRevB.90.125431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the Gamma- and X-conduction-band valleys, for which their spins may be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of Gamma-X-valley mixing, as evidenced by both experiment and theory.

引用

页数：10

共 50 条

[41] Observation of the magnetic soft mode in (Cd,Mn)Te quantum wells using spin-flip Raman scattering
Kehl, C.
Astakhov, G. V.
Kavokin, K. V.
Kusrayev, Yu. G.
Ossau, W.
Karczewski, G.
Wojtowicz, T.
Geurts, J.
PHYSICAL REVIEW B, 2009, 80 (24)
[42] High-resolution spin-flip Raman scattering in CdTe quantum wells at 3He temperature
Shen, R.
Oto, K.
Muro, K.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Takeyama, S.
PHYSICAL REVIEW B, 2009, 80 (12)
[43] Dependence of multiple Mn2+ spin-flip Raman scattering in quantum wells on the magnetic field direction
Smith, L. C.
Davies, J. J.
Wolverson, D.
Lentze, M.
Geurts, J.
Wojtowicz, T.
Karczewski, G.
PHYSICAL REVIEW B, 2008, 77 (11):
[44] Spin-flip Raman scattering studies of ZnSe/Zn1-xMnxSe multiple quantum well structures
Klar, PJ
Boyce, PJ
Wolverson, D
Heimbrodt, W
Hoffmann, N
Griesche, J
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 1061 - 1065
[45] Spin-flip Raman scattering of the neutral and charged excitons confined in a CdTe/(Cd,Mg)Te quantum well
Debus, J.
Dunker, D.
Sapega, V. F.
Yakovlev, D. R.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Bayer, M.
PHYSICAL REVIEW B, 2013, 87 (20)
[46] ELECTRON-PARAMAGNETIC-RES AND SPIN-FLIP RAMAN-SCATTERING IN THE N-TYPE MAGNETICALLY MIXED SEMICONDUCTORS
RYABCHENKO, SM
SEMENOV, YG
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 134 (01): : 281 - 288
[47] Intervalley scattering and the role of indirect band gap AlAs barriers: Application to GaAs/AlGaAs quantum cascade lasers
Mc Tavish, J.
Ikonic, Z.
Indjin, D.
Harrison, P.
ACTA PHYSICA POLONICA A, 2008, 113 (03) : 891 - 902
[48] Spin-flip Raman scattering in semi-magnetic quantum wells with in-plane anisotropy: Analysis of the intermediate states
Koudinov, AV
Kusrayev, YG
Zakharchenya, BP
Wolverson, D
Davies, JJ
Wojtowicz, T
Karczewski, G
Kossut, J
PHYSICAL REVIEW B, 2003, 67 (11):
[49] EXCHANGE INTERACTION AND SPIN-FLIP RAMAN-SCATTERING BY ACCEPTOR-BOUND HOLES IN QUANTUM-WELL STRUCTURES
IVCHENKO, EL
FIZIKA TVERDOGO TELA, 1992, 34 (02): : 476 - 486
[50] Resonant multiple Mn2+ spin-flip Raman scattering by virtual magnetic polarons in semimagnetic quantum wells
Stuehler, J.
Schaack, G.
Dahl, M.
Waag, A.
Landwehr, G.
Kavokin, K.V.
Merkulov, I.A.
Materials Science Forum, 1995, 182-184 : 561 - 564

← 1 2 3 4 5 →