Spin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots

被引：28

作者：

Debus, J. ^{[1
]}

Shamirzaev, T. S. ^{[2
,3
]}

Dunker, D. ^{[1
]}

Sapega, V. F. ^{[4
,5
]}

Ivchenko, E. L. ^{[4
]}

Yakovlev, D. R. ^{[1
,4
]}

Toropov, A. I. ^{[2
]}

Bayer, M. ^{[1
,4
]}

机构：

[1] Tech Univ Dortmund, D-44227 Dortmund, Germany

[2] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Ural Fed Univ, Ekaterinburg 620002, Russia

[4] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] St Petersburg State Univ, Spin Opt Lab, St Petersburg 198504, Russia

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

SEMICONDUCTORS; SUPERLATTICES; NANOCRYSTALS;

D O I：

10.1103/PhysRevB.90.125431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the Gamma- and X-conduction-band valleys, for which their spins may be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of Gamma-X-valley mixing, as evidenced by both experiment and theory.

引用

页数：10

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