Superconductivity and High-Pressure Performance of 2D Mo2C Crystals

被引:5
|
作者
Zhang, Junli [1 ,2 ]
Cao, Zhen [1 ]
He, Xin [1 ]
Liu, Wenhao [1 ]
Wen, Yan [1 ]
Cavallo, Luigi [1 ]
Ren, Wencai [3 ]
Cheng, Huiming [3 ]
Zhang, Xixiang [1 ]
机构
[1] King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn PSE, Thuwal 239556900, Saudi Arabia
[2] Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China
[3] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2021年 / 12卷 / 09期
关键词
TRANSITION; INTERFACE;
D O I
10.1021/acs.jpclett.1c00071
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) materials have attracted significant attention for their ability to support novel magnetoelectrical transport and their optical and magnetic properties, of which their superconductivity is particularly of interest. Here we report on the behavior of superconductivity in 2D Mo2C crystals when hydrostatic pressure is applied, which has not yet been described in the literature. We found that the localization of boundary atoms disorder-induced Cooper pairs can suppress the superconducting transition temperature (T-c) as effectively as a magnetic field and current. We observed that the Tc initially decreased as the pressure increased to 1.75 GPa but then began to increase as the pressure increased further to 2.5 GPa. Our density functional theory calculations revealed that this behavior was linked to the modulation of the strength of the electron-phonon coupling and the electron property, which was triggered by compression of the lattice under high pressure. We attributed the inflection point in the hydrostatic pressure-dependent T-c curve to the structural phase transition of Mo2C from a hexagonal to an orthorhombic structure. This work presents a new avenue for the study of the superconductivity of Mo2C, which can be extended to apply to other 2D superconductors to modulate their electronic states.
引用
收藏
页码:2219 / 2225
页数:7
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