Modeling of High-Performance p-Type IIIV Heterojunction Tunnel FETs

被引：188
|
作者：
Knoch, Joachim [1 ]
Appenzeller, Joerg [2 ]
机构：
[1] TU Dortmund Univ, D-44227 Dortmund, Germany
[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期
关键词：
Heterojunctions; MOS devices; tunnel; transistors; FIELD-EFFECT TRANSISTORS; DEVICE DESIGN;
D O I：
10.1109/LED.2010.2041180
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of band lineup and source doping concentration on the performance of heterojunction tunnel FETs (H-TFETs) with type-II heterointerface is investigated by simulations. Exemplarily, H-TFETs based on InAs/Al x Ga(1-x) Sb heterostructures are studied. Varying the Al content x, the band lineup can be adjusted from staggered to broken. We find that a staggered band lineup and a medium source doping concentration yield the best ON/OFF-state performance in terms of an inverse subthreshold slope that is smaller than 60 mV/dec and f(T) values in the terahertz range.
引用
收藏
页码：305 / 307
页数：3
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