Electrical Characteristics of ZnTe Thermoelectric Thin Films

被引：2

作者：

Chen, Wen-Shiush ^{[1
]}

Hsu, Cheng-Hsing ^{[1
]}

Kao, Wen-Hua ^{[1
]}

Yu, Yi-Ting ^{[1
]}

Yang, Pai-Chuan ^{[1
]}

Tseng, Ching-Fang ^{[1
]}

Lai, Chun-Hung ^{[1
]}

Lee, Ye-Mu ^{[1
]}

Yang, Hsi-Wen ^{[2
]}

Lin, Jenn-Sen ^{[3
]}

机构：

[1] Natl United Univ, Dept Elect Engn, 1 Lien Da, Kung Ching Li 36003, Miao Li, Taiwan

[2] Natl United Univ, Dept Mat Sci & Engn, Miaoli 36003, Taiwan

[3] Natl United Univ, Dept Mech Engn & Comp Sci, Miaoli 36003, Taiwan

来源：

ENERGY ENGINEERING AND ENVIRONMENT ENGINEERING | 2014年 / 535卷

关键词：

ZnTe films; thermal evaporation; electrical properties; thermoelectric; ZINC TELLURIDE;

D O I：

10.4028/www.scientific.net/AMM.535.688

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600 degrees C to 800 degrees C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700 degrees C are 3.5x10(15) cm(-3), 0.25 Omega-cm, and 49 cm(2) V-1 S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

引用

页码：688 / +

页数：2

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