Nano-SiC Doped MgB2 Bulks Synthesized by Rapid Process

被引:11
|
作者
Ding, Y. [1 ]
Wang, H. C. [1 ]
Zhao, F. X. [1 ]
Shi, Z. X. [1 ]
Zhang, Z. L. [2 ]
Ma, L. [2 ]
Suo, H. L. [2 ]
机构
[1] Southeast Univ, Dept Phys, Nanjing 211189, Peoples R China
[2] Beijing Univ Technol, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China
关键词
MgB2; bulks; Rapid process; Nano-SiC doping; CRITICAL-CURRENT DENSITY; FIELD;
D O I
10.1007/s10948-010-0701-4
中图分类号
O59 [应用物理学];
学科分类号
摘要
Both pure and nano-SIC doped MgB2 bulk samples were prepared by a rapid process. The effects of fast heating-up and doping on the critical current densities were studied. All samples were examined using XRD, SEM and magnetization measurement. Both pure and doped samples show higher critical current densities and irreversible field H-irr compared with samples sintered at the same temperature by a slow process. Experimental results manifest that fast heating-up is effective in reducing the grain size. This rapid process may be preferable to avoid grain size enlarging when element substitution can be achieved only at relatively high temperatures.
引用
收藏
页码:633 / 636
页数:4
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