Time-resolved spectroscopy on GaN/AlGaN double heterostructures and quantum wells

被引：5
|
作者：
Im, JS [1 ]
Off, J [1 ]
Sohmer, A [1 ]
Scholz, F [1 ]
Hangleiter, A [1 ]
机构：
[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
GaN/AlGaN quantum wells; time-resolved spectroscopy; radiative lifetime;
D O I：
10.4028/www.scientific.net/MSF.264-268.1299
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated GaN/AlGaN double heterostructures and quantum wells, grown by LP-MOVPE, using time-resolved photoluminescence spectroscopy. By combining our data for the lifetime and intensity, we derived the radiative lifetime, which is constant at low temperatures and increases at elevated temperatures. We explain this behavior on the basis of the thickness fluctuation and radiative recombination of free excitons at higher temperatures.
引用
收藏
页码：1299 / 1302
页数：4
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