Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

被引：2

作者：

Ma, Jingyi ^{[1
]}

Tong, Ling ^{[1
]}

Guo, Xiaojiao ^{[1
]}

Chen, Xinyu ^{[1
]}

Zhang, Minxing ^{[1
]}

Wu, Chenjian ^{[2
]}

Bao, Wenzhong ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Sch Microelect, Shanghai 200433, Peoples R China

[2] Soochow Univ, Sch Elect Informat, Suzhou 215006, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

基金：

中国国家自然科学基金;

关键词：

MoS2; different metal gates and inverter; CIRCUITS;

D O I：

10.1109/EDTM50988.2021.9420915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various methods have been investigated to manipulate the electrical properties of MoS2 transistors to achieve applicable logic levels, which are essential for integrated multistage logic circuits. A doping-free strategy by using metal gates with different work functions is demonstrated to modulate threshold voltage (V-TH), which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages from 0.2 V to 0.6 V and the obtained voltage gain is over 35.

引用

页数：3

共 50 条

[31] Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions
Lam, Kai Tak
Seol, Gyungseon
Guo, Jing
APPLIED PHYSICS LETTERS, 2014, 105 (01)
[32] Theoretical Threshold Voltage of Two-Dimensional Semiconductor Field-Effect Transistors
Zhang, Daoyu
Zhao, Yinhao
Yang, Minnan
JOURNAL OF PHYSICAL CHEMISTRY C, 2024, 128 (47): : 20310 - 20315
[33] Tunneling field-effect transistors with two-dimensional BiN as the channel semiconductor
Yan, Saichao
Wang, Kang
Guo, Zhixin
Wu, Yu-Ning
Chen, Shiyou
APPLIED PHYSICS LETTERS, 2024, 124 (14)
[34] A non-layered two-dimensional semiconductor for p-type transistors
Chen, Xiang
Zeng, Haibo
NATURE MATERIALS, 2025, : 671 - 672
[35] Electrically controlled dielectric band gap engineering in a two-dimensional semiconductor
Riis-Jensen, Anders C.
Lu, Jiong
Thygesen, Kristian S.
PHYSICAL REVIEW B, 2020, 101 (12)
[36] Strain engineering of ferroelectric polarization and domain in the two-dimensional multiferroic semiconductor
Gao, Lijing
Chen, Xiaofang
Qi, Jingshan
APPLIED PHYSICS LETTERS, 2024, 125 (21)
[37] Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping
Reuter, D
Meier, C
Seekamp, A
Wieck, AD
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 938 - 941
[38] Manipulating the Edge of a Two-Dimensional MgO Nanoisland
Xu, Chaoqiang
Que, Yande
Zhuang, Yuan
Liu, Bin
Ma, Yaping
Wang, Kedong
Xiao, Xudong
JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (32): : 19619 - 19624
[39] Superatomic Two-Dimensional Semiconductor
Zhong, Xinjue
Lee, Kihong
Choi, Bonnie
Meggiolaro, Daniele
Liu, Fang
Nuckolls, Cohn
Pasupathy, Abhay
De Angelis, Filippo
Batail, Patrick
Roy, Xavier
Zhu, Xiaoyang
NANO LETTERS, 2018, 18 (02) : 1483 - 1488
[40] Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
Meng, C.C.
Su, J.Y.
Yang, S.M.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (9 A): : 6389 - 6394

← 1 2 3 4 5 →