Influence of H2 and D2 plasmas on the work function of caesiated materials

被引:25
|
作者
Friedl, R. [1 ]
Fantz, U. [1 ,2 ]
机构
[1] Univ Augsburg, AG Expt Plasmaphys, D-86135 Augsburg, Germany
[2] Max Planck Inst Plasma Phys, Boltzmannstr 2, D-85748 Garching, Germany
关键词
ION PRODUCTION; CESIUM; ELECTRON; SURFACE; METALS; EMISSION;
D O I
10.1063/1.5000373
中图分类号
O59 [应用物理学];
学科分类号
摘要
Caesium-covered surfaces are used in negative hydrogen ion sources as a low work function converter for H-/D- surface production. The work function chi of the converter surface is one of the key parameters determining the performance of the ion source. Under idealized conditions, pure bulk Cs has 2.14 eV. However, residual gases at ion source background pressures of 10(-7)-10(-6) mbar and the plasma surface interaction with the hydrogen discharge in front of the caesiated surface dynamically affect the actual surface work function. Necessary fundamental investigations on the resulting chi are performed at a dedicated laboratory experiment. Under the vacuum conditions of ion sources, the incorporation of impurities into the Cs layer leads to very stable Cs compounds. The result is a minimal work function of chi(vac) approximate to 2.75 eV for Cs evaporation rates of up to 10 mg/h independent of substrate material and surface temperature (up to 260 degrees C). Moreover, a distinct degradation behavior can be observed in the absence of a Cs flux onto the surface leading to a deterioration of the work function by about 0.1 eV/h. However, in a hydrogen discharge with plasma parameters close to those of ion sources, fluxes of reactive hydrogen species and VUV photons impact on the surface which reduces the work function of the caesiated substrate down to about 2.6 eV even without Cs supply. Establishing a Cs flux onto the surface with Gamma(Cs) approximate to 10(17) m(-2) s(-1) further enhances the work function obtaining values around 2.1 eV, which can be maintained stable for several hours of plasma exposure. Hence, Cs layers with work functions close to that of pure bulk Cs can be achieved for both H-2 and D-2 plasmas. Isotopic differences can be neglected within the measurement accuracy of about 0.1 eV due to comparable plasma parameters. Furthermore, after shutting down the Cs evaporation, continuing plasma exposure helps against degradation of the Cs layer resulting in a constant low work function for at least 1 h.
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页数:7
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