Wafer-scale photolithography of ultra-sensitive nanocantilever force sensors

被引:4
|
作者
Pan, Ying [1 ]
Miller, Calder [1 ]
Trepka, Kai [1 ]
Tao, Ye [1 ]
机构
[1] Harvard Univ, Rowland Inst, Cambridge, MA 02142 USA
关键词
SILICON NANOWIRE ARRAYS; MAGNETIC-RESONANCE; ATOMIC-RESOLUTION; FABRICATION; MICROSCOPY; CANTILEVERS;
D O I
10.1063/1.5043479
中图分类号
O59 [应用物理学];
学科分类号
摘要
The detection of small forces using singly clamped cantilevers is a fundamental feature in ultrasensitive versions of scanning probe force microscopy. In these technologies, silicon-based nanomechanical devices continue to be the most widespread high-performance nanomechanical sensors for their availability, ease of fabrication, inherently low mechanical dissipation, and good control of surface-induced mechanical dissipation. Here, we develop a robust method to batch fabricate extreme-aspect-ratio (10(3)), singly clamped scanning nanowire mechanical resonators from plain bulk silicon wafers using standard photolithography. We discuss the superior performance and additional versatility of the approach beyond what can be achieved using the established silicon on insulator technology. (C) 2018 Author(s).
引用
收藏
页数:4
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