Modeling and Analysis of High-Speed Modified Uni-Travelling-Carrier Photodiodes Under High Optical Power Injection

被引：0
|
作者：
Peng, Zhangwan [1 ]
Xiong, Wanshu [1 ]
Yao, Ruoyun [1 ]
Chi, Chaodan [2 ]
Xiong, Yiti [2 ]
Ji, Chen [1 ]
机构：
[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou, Peoples R China
[2] Zhejiang Lab, Res Inst Intelligent Networks, Hangzhou, Peoples R China
来源：
2022 IEEE 7TH OPTOELECTRONICS GLOBAL CONFERENCE, OGC | 2022年
基金：
中国国家自然科学基金;
关键词：
MUTC-PD; terahertz; high optical power injection;
D O I：
10.1109/OGC55558.2022.10050988
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We simulated InGaAs/InP Modified Uni-TravelingCarrier Photodiodes (MUTC-PDs) with different reverse bias voltages under high optical power injection, using a commercial device level simulator Apsys. By optimizing the absorber layer structure and the operating voltage, this work achieved an MUTC-PD design with an opto-electric responsivity of 0.16A/W and over 300GHz 3-dB bandwidth under 10 mW/mu m(2) optical injection density.
引用
收藏
页码：167 / 170
页数：4
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