Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator

被引：24
|
作者：
Ding, Xingwei [1 ]
Zhang, Hao [2 ]
Ding, He [2 ]
Zhang, Jianhua [2 ]
Huang, Chuanxin [1 ]
Shi, Weimin [1 ]
Li, Jun [1 ]
Jiang, Xueyin [1 ]
Zhang, Zhilin [1 ,2 ]
机构：
[1] Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China
[2] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2014年 / 76卷
基金：
中国国家自然科学基金;
关键词：
Thin-film transistors; Dual-active-layers; Atomic layer deposition; Density-of-states; AMORPHOUS OXIDE SEMICONDUCTORS; PERFORMANCE; DIELECTRICS;
D O I：
10.1016/j.spmi.2014.10.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We successfully integrated the high-performance oxide thin film transistors with novel IZO/IGZO dual-active-layers. The results showed that dual-active-layer (IZO/IGZO) TFTs, compared with single active layer IGZO TFTs and IZO TFTs, exhibited the excellent performances; specifically, a high field effect mobility of 14.4 cm(2)/Vs, a suitable threshold voltage of 0.8 V. a high on/off ratio of more than 10(7), a steep sub-threshold swing of 0.13 V/dec, and a substantially small threshold voltage shift of 0.51 V after temperature stress from 293 K to 353 K. In order to understand the superior performance, the density-of-states (DOS) were investigated based on the temperature-dependent transfer curves. The superior electric properties were attributed to the smaller DOS and higher carrier concentration. The proposed IZO/IGZO-TFT in this paper can be used as driving devices in the next-generation flat panel displays. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：156 / 162
页数：7
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