Low threshold, diode end-pumped Nd3+:GdVO4 self-Raman laser

被引：21
|
作者：
Baoshan, Wang [1 ]
Huiming, Tan
Jiying, Peng
Jieguang, Miao
Lanlan, Gao
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & phys, Jinan 130033, Peoples R China
[2] Grad Univ, Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
OPTICAL MATERIALS | 2007年 / 29卷 / 12期
关键词：
Raman laser; SRS; actively Q-switched; yellow laser;
D O I：
10.1016/j.optmat.2006.10.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low threshold, high efficient Raman laser output has been realized from a compact, diode end-pumped, self-stimulating Nd3+:GdVO4 Raman laser. Maximum Raman output power of 100 mW was achieved at a pulse repetition frequency (PRF) of 10 kHz with 1.8 W pump power. The optical efficiency is 5.6% from diode to Raman laser and the slope efficiency is 8%. The lowest threshold for the SRS process is only 400 mW at a PRF of 5 kHz. By generating second harmonics using a LBO crystal, 3 mW 588 nm yellow laser was also produced. A strong blue emission was observed in the Nd3+ :GdVO4 crystal when the Raman laser output, we contribute this for the upconversion of the Nd3+ in the crystal. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：1817 / 1820
页数：4
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