Optical on-line monitoring for the long-term stabilization of a reactive mid-frequency sputtering process of Al-doped zinc oxide films

被引:6
|
作者
Sittinger, V. [1 ]
Ruske, F. [2 ]
Pflug, A. [1 ]
Dewald, W. [1 ]
Szyszka, B. [1 ]
Dittmar, G. [3 ]
机构
[1] Fraunhofer Inst Surface Engn & Thin Films IST, D-38108 Braunschweig, Germany
[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-12489 Berlin, Germany
[3] Sentech Instruments GmbH, D-12484 Berlin, Germany
关键词
Aluminum doped zinc oxide films; Process control; Reactive sputter deposition; Thin film solar cells; SOLAR-CELL; SILICON; ZNO; TRANSPARENT;
D O I
10.1016/j.tsf.2009.09.167
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Closed-loop feedback control systems have shown to be able to stabilize optimum process conditions for reactively sputtered aluminum doped zinc oxide (ZnO:Al) films on glass, but the problem of long term drift has not been addressed so far. In the present work we describe an online control method which is able to detect process drifts and offers the possibility to adjust operation point settings in long-term operation. The control system is based on the evaluation of spectroscopic photometry measurements in the visible and near-infrared wavelength regime. The measured spectra are evaluated with respect to their band-gap and free carrier absorption. We found that the band gap and the plasma frequency are directly correlated with the oxygen partial pressure during deposition. Comparing the plasma frequency with Hall measurements, it was shown that the carrier concentration in the films can be monitored. This enables a control of free carrier absorption during a production process. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3115 / 3118
页数:4
相关论文
共 22 条
  • [1] Microstructure evolution of Al-doped zinc oxide films prepared by in-line reactive mid-frequency magnetron sputtering
    Hong, R. J.
    Jiang, X.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 84 (1-2): : 161 - 164
  • [2] Microstructure evolution of Al-doped zinc oxide films prepared by in-line reactive mid-frequency magnetron sputtering
    R.J. Hong
    X. Jiang
    [J]. Applied Physics A, 2006, 84 : 161 - 164
  • [3] Impedance control of reactive sputtering process in mid-frequency mode with dual cathodes to deposit Al-doped ZnO films
    Kon, M
    Song, PK
    Shigesato, Y
    Frach, P
    Ohno, S
    Suzuki, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (01): : 263 - 269
  • [4] Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodes
    Kon, Masato
    Song, Pung Keun
    Shigesato, Yuzo
    Frach, Peter
    Mizukami, Akio
    Suzuki, Koichi
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 814 - 819
  • [5] Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodes
    Kon, M
    Song, PK
    Shigesato, Y
    Frach, P
    Mizukami, A
    Suzuki, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 814 - 819
  • [6] Transparent and conductive aluminum doped zinc oxide films prepared by mid-frequency reactive magnetron sputtering
    Szyszka, B
    [J]. 2ND INTERNATIONAL CONFERENCE ON COATINGS ON GLASS, ICCG: HIGH-PERFORMANCE COATINGS FOR TRANSPARENT SYSTEMS IN LARGE-AREA AND/OR HIGH-VOLUME APPLICATIONS, 1999, : 249 - 254
  • [7] Transparent and conductive aluminum doped zinc oxide films prepared by mid-frequency reactive magnetron sputtering
    Szyszka, B
    [J]. THIN SOLID FILMS, 1999, 351 (1-2) : 164 - 169
  • [8] Properties of aluminum-doped zinc oxide films deposited by high rate mid-frequency reactive magnetron sputtering
    Malkomes, N
    Vergöhl, M
    Szyszka, B
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (02): : 414 - 419
  • [9] Structural, electrical and optical characteristics of Al-doped zinc oxide thin films deposited by reactive magnetron sputtering
    Zubkins, M.
    Kalendarev, R.
    Vilnis, K.
    Azens, A.
    Purans, J.
    [J]. INTERNATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND NANOTECHNOLOGIES 2013 (FM&NT2-13), 2013, 49
  • [10] Influence of negative ion resputtering on Al-doped ZnO thin films prepared by mid-frequency magnetron sputtering
    Cai, Yongan
    Liu, Wei
    He, Qing
    Zhang, Yi
    Yu, Tao
    Sun, Yun
    [J]. APPLIED SURFACE SCIENCE, 2010, 256 (06) : 1694 - 1697