Efficient Gating of Organic Electrochemical Transistors with In-Plane Gate Electrodes

被引:30
|
作者
Koutsouras, Dimitrios A. [1 ]
Torricelli, Fabrizio [2 ]
Gkoupidenis, Paschalis [1 ]
Blom, Paul W. M. [1 ]
机构
[1] Max Planck Inst Polymer Res, Dept Mol Elect, Ackermannweg 10, D-55128 Mainz, Germany
[2] Univ Brescia, Dept Informat Engn, Via Branze 38, I-25123 Brescia, Italy
关键词
organic electrochemical transistors; device physics; organ-on-a-chip;
D O I
10.1002/admt.202100732
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic electrochemical transistors (OECTs) are electrolyte-gated transistors, employing an electrolyte between their gate and channel instead of an insulating layer. For efficient gating, non-polarizable electrodes, for example, Ag/AgCl, are typically used but unfortunately, this simple approach limits the options for multiple gate integration. Patterned polarizable Au gates on the other hand, show strongly reduced gating due to a large voltage drop at the gate/electrolyte interface. Here, an alternative, simple yet effective method for efficient OECT gating by scalable in-plane gate electrodes, is demonstrated. The fact that poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) exhibits a volumetric capacitance in an electrolyte is made use of. As a result, the capacitance of PEDOT:PSS-based gates can be strongly enhanced by increasing their thickness, thereby reducing the voltage loss at the gate/electrolyte interface. By combining spin coating and electrodeposition, planar electrodes of various thicknesses are created on a multi-gated OECT chip and their effect on the gating efficiency, examined. It is shown that the gating performed by an in-plane PEDOT:PSS electrode can be tuned to be comparable to the one obtained by a Ag/AgCl electrode. Overall, the realization of efficient gating with in-plane electrodes paves the way toward integration of OECT-based biosensors and "organ-on-a-chip" platforms.
引用
收藏
页数:9
相关论文
共 50 条
  • [31] Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate
    Kyuregyan, AS
    SEMICONDUCTORS, 1998, 32 (04) : 446 - 451
  • [32] Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate
    A. S. Kyuregyan
    Semiconductors, 1998, 32 : 446 - 451
  • [33] Laser-Induced Graphene Electrodes for Organic Electrochemical Transistors (OECTs)
    Nazeri, Mohammad
    Ghalamboran, Milad
    Grau, Gerd
    ADVANCED MATERIALS TECHNOLOGIES, 2023, 8 (17)
  • [34] Bubble gate for in-plane flow control
    Oskooei, Ali
    Abolhasani, Milad
    Guenther, Axel
    LAB ON A CHIP, 2013, 13 (13) : 2519 - 2527
  • [35] Ionic thermoelectric gating organic transistors
    Zhao, Dan
    Fabiano, Simone
    Berggren, Magnus
    Crispin, Xavier
    Nature Communications, 2017, 8
  • [36] Ionic thermoelectric gating organic transistors
    Dan Zhao
    Simone Fabiano
    Magnus Berggren
    Xavier Crispin
    Nature Communications, 8
  • [37] The double layer capacitance of ionic liquids for electrolyte gating of ZnO thin film transistors and effect of gate electrodes
    Singh M.
    Manoli K.
    Tiwari A.
    Ligonzo T.
    Di Franco C.
    Cioffi N.
    Palazzo G.
    Scamarcio G.
    Torsi L.
    Torsi, L. (luisa.torsi@uniba.it), 1600, Royal Society of Chemistry (05) : 3509 - 3518
  • [38] In-plane gate transistors in AlxGa1-xN/GaN heterostructures written by focused ion beams
    Ebbers, A
    Reuter, D
    Heuken, M
    Wieck, AD
    SUPERLATTICES AND MICROSTRUCTURES, 2003, 33 (5-6) : 381 - 388
  • [39] Transport characterization of Schottky in-plane gate Al0.3Ga0.7As/GaAs quantum wire transistors realized by in-situ electrochemical process
    Okada, H
    Hashizume, T
    Hasegawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6971 - 6976
  • [40] Organic electrochemical transistors
    Jonathan Rivnay
    Sahika Inal
    Alberto Salleo
    Róisín M. Owens
    Magnus Berggren
    George G. Malliaras
    Nature Reviews Materials, 3