Physics of high-intensity nanosecond electron source: Charge limit phenomenon in GaAs photocathodes

被引:33
|
作者
HerreraGomez, A
Vergara, G
Spicer, WE
机构
[1] STANFORD LINEAR ACCELERATOR CTR,STANFORD,CA 94309
[2] CINVESTAVUAQ,LAB INVEST MAT,QUERETARO 76010,MEXICO
[3] UAQ,CINVESTAV,LAB INVEST MAT,QUERETARO 76010,MEXICO
[4] CTR INVEST DESARROLLO ARMADA,E-28033 MADRID,SPAIN
关键词
D O I
10.1063/1.361448
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaAs negative electron affinity cathodes are used as high-intensity, short-time electron source at the Stanford Linear Accelerator Center. When the cathodes are illuminated with high-intensity laser pulses draw peak currents that are extremely high, typically of tens of Amperes. Because of the high currents, some nonlinear effects are present. Very noticeable is the so-called charge limit (CL) effect, which consists of a limit on the total charge in each pulse; that is, the total bunch charge stops increasing as the light pulse intensity increases. The CL effect is directly related to a photovoltage built up in the surface as a consequence of the photoelectrons coming from the bulk. We discuss possible ways to minimize the formation of the surface photovoltage. (C) 1996 American Institute of Physics.
引用
收藏
页码:7318 / 7323
页数:6
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