A low-loss microstrip surface-mount K-Band package

This paper presents a hermetic-compatible surface mount package for microstrip structures designed for K-band applications. The microstrip lines, fabricated on a 250 pm-thick alumina substrate are packaged using a 280 pm-thick silicon cap wafer and gold-gold thermo-compression bonding.-A 130 pm cavity is etched in the cap wafer to allow ample space for RF MEMS devices, surface- or bulk-wave acoustic filters, power amplifiers, or multi-chip assemblies. A via-hore transition is used to connect the microstrip line inside the package to the coplanar waveguide (CPW) line on the back side of the alumina wafer. The gold sealing ring is connected to the microstrip ground using via-holes through the alumina wafer, to eliminate any parasitic resonance modes and to improve the isolation between the input and output ports. A packaged microstrip line with total dimensions of 2.6 mm has a measured insertion loss and return loss of less than 0.5 dB and -18 dB, respectively, at DC-23 GHz.