Bridging the Price/Performance Gap Between Silicon Drift and Silicon PIN Diode Detectors

被引：3

作者：

Hullinger, Derek D. ^{[1
]}

Carter, Chris R. ^{[1
]}

Smith, Jerry R. ^{[1
]}

Decker, Keith W. ^{[1
]}

机构：

[1] Moxtek Inc, Orem, UT 84057 USA

来源：

2009 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-5 | 2009年

关键词：

D O I：

10.1109/NSSMIC.2009.5402192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Use of silicon drift detectors continues to increase as new XRF applications drive performance improvements beyond existing silicon PIN diode detector capabilities. Recent developments in Si-PIN detectors result in significantly improved performance. This paper describes improvements in spectral resolution, count rate capability, and detection limits in silicon PIN diode detectors. These improvements result in detectors that, for some applications, offer an attractive alternative to silicon drift detectors at a fraction of the cost. This improvement helps bridge the gap between existing silicon PIN diode detector capability and the silicon drift detector (SDD).

引用

页码：1800 / 1803

页数：4

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