Short-circuit protection structure for insulated gate power devices

被引：0

作者：

Caramel, C ^{[1
]}

Austin, P ^{[1
]}

Sanchez, JL ^{[1
]}

Imbernon, E ^{[1
]}

Breil, M ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper, we present a new integrated structure which can protect insulated gate power devices (IGBT, VDMOS, EST,...) from short-circuit operating mode. This structure is built with an anode voltage sensor, a delay LDMOS transistor, a LDMOS transistor allowing the power device gate unload and a Zener diode. It is notable that this protection structure is fully compatible with it power-device technological process. The operating mode and the first optimization of the protection structure are presented. For this, IGBT is used as test device. 2D simulations are performed with ISE TCAD. First experimental results of the anode voltage sensor are given and compared with simulation results.

引用

页码：297 / 300

页数：4

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