Very sensitive porous silicon NO2 sensor

被引:93
|
作者
Pancheri, L
Oton, CJ
Gaburro, Z
Soncini, G
Pavesi, L
机构
[1] Univ Trent, Dept Informat & Commun Technol, I-38050 Trento, Italy
[2] Univ Trent, INFM, I-38050 Trento, Italy
[3] Univ Trent, Dept Phys, I-38050 Trento, Italy
关键词
porous silicon; NO2; gas sensor; conductivity;
D O I
10.1016/S0925-4005(02)00471-9
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We report a nitrogen dioxide sensor suitable for environmental control, based on the change in conductivity of a single meso-porous silicon (PS) layer with about 80% porosity. We present the characterization of the sensor in the presence of low concentrations of NO2 in dry air and study the influence of humidity on sensor behaviour. The sensor shows a sensitivity to 12 ppb of NO2 in dry air and a good response to 50 ppb in humid air. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:237 / 239
页数:3
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