Fabrication of high-output-power AlGaN/GaN-based UV-Light-Emitting diode using a Ga droplet layer

被引：0
|
作者：
Lee, YB
Wang, T
Liu, YH
Ao, JP
Li, HD
Sato, H
Nishino, K
Naoi, Y
Sakai, S
机构：
[1] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan
[2] Nitride Semicond Co Ltd, Naruto, Tokushima 7710360, Japan
[3] Univ Tokushima, Satellite Venture Business Lab, Tokushima 7708506, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 10A期
关键词：
ultraviolet (UV); light-emitting diode (LED); AlGaN; GaN; optical output power; Ga droplet layer;
D O I：
10.1143/JJAP.41.L1037
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a new method of increasing the Output power of an ultraviolet light-emitting diode (UV-LED) based on an AlGaN/GaN single quantum well (SQW). In this method. a thin Ga droplet layer is intentionally grown before the growth of an AlGaN/GaN SQW active layer. The Ga droplet layer causes a spatial and compositional fluctuation on the SQW active layer. which induces exciton localization in the potential minima, The LEDs fabricated with the Ga droplet layer show an emission peak of 353 nm and a higher optical output power than those of the same structure but without the Ga droplet layer.
引用
收藏
页码：L1037 / L1039
页数：3
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