Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

被引：1
|
作者：
Isakhanov, Z. A. [1 ]
Yorkulov, R. M. [1 ]
Umirzakov, B. E. [2 ]
Isayev, M. Sh [2 ]
Abduvayitov, A. A. [2 ]
机构：
[1] Uzbek Acad Sci, Inst Ion Plasma & Laser Technol, Tashkent 100125, Uzbekistan
[2] Tashkent State Tech Univ, Tashkent 100095, Uzbekistan
来源：
JOURNAL OF SURFACE INVESTIGATION | 2021年 / 15卷 / 02期
关键词：
implantation; nanophase; composition; nanofilm; emission; ion dose; clusters; metal silicides; surface morphology; OPTICAL-PROPERTIES; ION-IMPLANTATION; SI;
D O I：
10.1134/S1027451021020221
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Nanophases and films of SiO2 and metal silicides are obtained by the low-energy (E-0 = 1-5 keV) implantation of O-2(+), Ba+, Cu+ and Co+ ions followed by annealing on the surface of a free Si/Cu (100) nanofilm system. Their surface morphology, composition, energy-band parameters, the maximum value of the secondary-electron-emission coefficient, and the quantum yield of photoelectrons are determined. It is shown that the band gap of metal silicides is 0.3-0.4 eV, and their specific resistance is 100-500 mu Ohm cm.
引用
收藏
页码：401 / 403
页数：3
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