Synthesis of Zn-In-S Quantum Dots with Tunable Composition and Optical Properties

被引:17
|
作者
Wang, Xianliang [1 ]
Damasco, Jossana [2 ]
Shao, Wei [2 ]
Ke, Yujie [1 ]
Swihart, Mark T. [1 ]
机构
[1] SUNY Buffalo, Dept Chem & Biol Engn, Buffalo, NY 14260 USA
[2] SUNY Buffalo, Dept Chem, Buffalo, NY 14260 USA
关键词
bandgap; colloidal synthesis; nanoparticles; quantum dots; semiconductor nanocrystals; SURFACE-PLASMON RESONANCE; COLLOIDAL NANOCRYSTALS; LOW-TEMPERATURE; SHAPE CONTROL; BAND-GAP; SIZE; LUMINESCENT; PHASE; EMISSION; GEL;
D O I
10.1002/cphc.201500746
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
II-III-VI semiconductors are of interest due to their chemical stability and composition-tunable optical properties. Here, we report a methodology for the synthesis of monodisperse zinc-indium-sulfide (ZIS) alloy quantum dots (QDs, mean diameter from approximate to 2 to 3.5nm) with an In content substantially below that of the stoichiometric ZnIn2S4 compound. The effects of indium incorporation on the size, lattice constant, and optical properties of ZIS QDs are elucidated. In contrast to previous reports, we employ sulfur dissolved in oleic acid as the sulfur donor rather than thioacetamide (TAA). The size of the ZIS QDs and their crystal lattice constant increased with increasing In incorporation, but they maintained the cubic sphalerite phase of ZnS, rather than the hexagonal phase typical of ZnIn2S4. The QDs' absorbance onset at UV wavelengths red-shifts with increasing In content and the accompanying increase in NC size. The ZIS NCs and related materials, whose synthesis is enabled by the approach presented here, provide new opportunities to apply II-III-VI semiconductors in solution-processed UV optoelectronics.
引用
收藏
页码:687 / 691
页数:5
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