New experimental findings for single-event gate rupture in MOS capacitors and linear devices

被引：25
|
作者：
Lum, GK [1 ]
Boruta, N
Baker, JM
Robinette, L
Shaneyfelt, MR
Schwank, JR
Dodd, PE
Felix, JA
机构：
[1] Lockheed Martin Space Syst Co, Sunnyvale, CA 94088 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
catastrophic gate oxide failure; dielectric gate rupture; linear devices; single-event gate rupture (SEGR);
D O I：
10.1109/TNS.2004.840262
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.
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页码：3263 / 3269
页数：7
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