Enhanced electron-hole interaction and optical absorption in a silicon nanowire

被引:61
|
作者
Yang, Li [1 ]
Spataru, Catalin D.
Louie, Steven G.
Chou, M. Y.
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevB.75.201304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a first-principles study of the correlated electron-hole states in a silicon nanowire of a diameter of 1.2 nm and their influence on the optical absorption spectrum. The quasiparticle states are calculated employing a many-body Green's function approach within the GW approximation to the electron self-energy, and the effects of the electron-hole interaction to optical excitations are evaluated by solving the Bethe-Salpeter equation. The enhanced Coulomb interaction in this confined geometry results in an unusually large binding energy (1-1.5 eV) for the excitons, which dominate the optical absorption spectrum.
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页数:4
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