Structural and dielectric properties of energetically deposited hafnium oxide films

被引：6
|
作者：
Murdoch, B. J. [1 ]
McCulloch, D. G. [1 ]
Partridge, J. G. [1 ]
机构：
[1] RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 12期
基金：
澳大利亚研究理事会;
关键词：
hafnium oxide; thin film; dielectric constant; THIN-FILMS; STABILITY;
D O I：
10.1088/0268-1242/29/12/125014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous hafnium oxide films, energetically deposited at room temperature from a filtered cathodic vacuum arc (FCVA) onto Si substrates, exhibit low current leakage (11 mu A cm(-2) in an electric field of 100 kV cm(-1)), a dielectric constant (k) of 17 and a refractive index exceeding 2.1 over the visible spectrum. Cross-sectional transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy loss spectroscopy revealed an amorphous microstructure and higher film density when compared with HfO2 deposited by reactive direct-current magnetron sputtering. The superior properties and higher density of the FCVA HfO2 are attributed to the elevated energy of the depositing flux.
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页数：5
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