Laser dicing and subsequent die strength enhancement technologies for ultra-thin wafer

被引:0
|
作者
Li, Jianhua [1 ]
Hwang, Hyeon [1 ]
Alm, Eun-Chul [1 ]
Chen, Qiang [1 ]
Kim, Pyoungwan [1 ]
机构
[1] Samsung Elect Co Ltd, Div Memory, Dev Interconnect Technol, San 16,Banweol Dong, Hwayang 445701, South Korea
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Current mechanical wafer dicing process adopting diamond grit shows advantages of low cost and high productivity. However, mechanical process for ultra-thin wafers would induce residual stress or mechanical damage, which can lead to wafer broken and die cracking. With the development of laser technology, laser precision micromachining has been employed for thin semiconductor wafer singulation, which shows advantages of no,chipping, small kerf width, and high throughput over mechanical blade dicing. However, thermal damage to the chip induced by laser ablation results in die strength degradation. For ultra thin chip, low die strength tends to induce die crack in packaging process. Thus, thermal damage to the chip needs to be studied. In this study, first we made a comparison between mechanical blade sawing and laser ablation processes. Die strength and microstructure changes were studied by means of bending test and transmission electron microscope (TEM) analysis, respectively. Die strength results showed that the die strength obtained by laser dicing was far lower than that obtained by blade sawing. TEM analysis demonstrated that formation of microcracks and porosities in laser diced face, caused the die strength degradation. In addition, significant deviation between frontside and backside die strength was found in the laser micromachinned dies. The reason for this deviation was clarified as the defects density difference existing in top and bottom layer of the chip sidewall. Experiments results showed that the die strength obtained by laser dicing can not meet the demand of the packaging process. It tends to crack or fracture in the die attach or wire bonding process. Thus, it is essential to improve the die strength. Thus, in this investigation, etching processes including wet-etch and dry-etch were attempted to recover the die strength by removing the chip side wall damage. SEM and TEM images indicated that, before etching, the laser diced side walls were with rough surfaces, voids and microcracks. After etching, the surfaces got smooth and most of the voids and microcracks were removed. Chip strength measurement also verified the partial die strength recovery after etching process.
引用
收藏
页码:761 / +
页数:2
相关论文
共 50 条
  • [1] A Novel Ultra-Thin Dicing Die Attach Film for Various Dicing Processes
    Yamagishi, Masanori
    Ishii, Yutaro
    Kirihata, Tomoka
    Miyawaki, Manabu
    2024 IEEE 10TH ELECTRONICS SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE, ESTC 2024, 2024,
  • [2] Multiphysical modeling of nanosecond laser dicing on ultra-thin silicon wafers
    Galasso, G.
    Kaltenbacher, M.
    Karunamurthy, B.
    Eder, H.
    Polster, T.
    2014 15TH INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME), 2014,
  • [3] Full Dicing of Ultra-thin Silicon Carbide Substrate by Femtosecond Laser
    Zhang W.
    Liu T.
    He J.-L.
    Zhang J.-F.
    Zhang Y.-L.
    Long J.-Y.
    Xie X.-Z.
    Surface Technology, 2023, 52 (01): : 306 - 313
  • [4] Advanced Dicing Technologies for Combination of Wafer to Wafer and Collective Die to Wafer Direct Bonding
    Inoue, Fumihiro
    Phommahaxay, Alain
    Podpod, Arnita
    Suhard, Samuel
    Sleeckx, Erik
    Rebibis, Kenneth June
    Miller, Andy
    Beyne, Eric
    Hoshino, Hitoshi
    Moeller, Berthold
    2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2019, : 437 - 445
  • [5] Characterization of Dicing Tape Adhesion for Ultra-thin Die Pick-up Process
    Chan, Y. Sing
    Chew, Julie
    Goh, Chu Hua
    Chua, Siang Kuan
    Yeo, Alfred
    2014 IEEE 16TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2014, : 554 - 557
  • [6] ULTRA WAFER THINNING AND DICING TECHNOLOGY FOR STACKED DIE PACKAGES
    Zhang, Renfu
    Liu, Hao
    Li, Bo
    Sugiya, Tetsukazu
    2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2016,
  • [7] Non-contact fast wafer metrology for ultra-thin patterned wafers mounted on grinding and dicing tapes
    Walecki, W
    Suchkov, V
    Van, P
    Lai, K
    Pravdivtsev, A
    Mikhaylov, G
    Lau, S
    Koo, A
    29TH INTERNATIONAL ELECTRONICS MANUFACTURING TECHNOLOGY SYMPOSIUM, 2004, : 323 - 325
  • [8] Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems
    Phommahaxay, Alain
    Suhard, Samuel
    Bex, Pieter
    Iacovo, Serena
    Slabbekoorn, John
    Inoue, Fumihiro
    Peng, Lan
    Kennes, Koen
    Sleeckx, Erik
    Beyer, Gerald
    Beyne, Eric
    2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2019, : 607 - 613
  • [9] Enabling single-wafer process technologies for reliable ultra-thin gate dielectrics
    Miner, G
    Xing, GC
    Joo, HS
    Sanchez, E
    Yokota, Y
    Chen, CL
    Lopes, D
    Balakrishna, A
    ADVANCES IN RAPID THERMAL PROCESSING, 1999, 99 (10): : 3 - 14
  • [10] Ultra-thin PoP Solution Using Wafer Level Fan-out Technologies
    Hsieh, Chueh An
    Tsai, Chung Hsuan
    2016 6TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC), 2016,