A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

被引：0
|
作者：
Yu, Z [1 ]
Li, DZ [1 ]
Cheng, BW [1 ]
Huang, CJ [1 ]
Lei, ZL [1 ]
Yu, JZ [1 ]
Wang, QM [1 ]
Liang, JW [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 218卷 / 2-4期
关键词：
SiGe/Si; epitaxial growth; surface reaction kinetics; UHV/CVD system;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：245 / 249
页数：5
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