Sputtered Ti/Cr-Pt-Au based ohmic contacts

In the fabrication of silicon microwave and millimeter wave devices the need for high quality ohmic contacts is always there. Low contact resistance and higher reliability due to less inter-diffusion of metal species into silicon are the basic requirements to be met. Besides these the conductivity of thin film metal layers involved for ohmic contacts should be as high as possible. While fabricating Ti/Cr-Pt-Au based ohmic contact metallization, the sputtering parameters are required to be set such that higher conductivity thin films are deposited. A number of experiments have been conducted in our laboratory to set RF and DC magnetron sputtering parameters for Ti, Cr Pt and Au thin films. The experimental results indicating the optimum sputtering parameters shall he presented in this paper.