Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN

被引：20
|
作者：
Zhao, ZM [1 ]
Jiang, RL [1 ]
Chen, P [1 ]
Xi, DJ [1 ]
Yu, HQ [1 ]
Shen, B [1 ]
Zhang, R [1 ]
Shi, Y [1 ]
Gu, SL [1 ]
Zheng, YD [1 ]
机构：
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 02期
关键词：
D O I：
10.1063/1.1385189
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Al and Ti/Al/Pt/Au ohmic contacts on GaN epitaxial layers were studied. The epilayers were grown on Si (111) substrates by low-pressure metalorganic chemical vapor deposition. Al/GaN contacts achieved a minimum contact resistivity of 7.5x10(-3) Omega cm(2) after annealing in N-2 ambient at 450 degreesC for 3 min. Further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved a minimum contact resistivity of 8.4x10(-5) Omega cm(2) after annealing in N-2 at 650 degreesC for 20 s. The Ti/Al/Pt/Au contacts on GaN showed a better thermal stability than Al/GaN contacts. After annealing at 600 degreesC for 30 min. they were still ohmic contacts. The mechanisms for ohmic contact formation of Ti/Al/Pt/Au contacts were also analyzed. (C) 2001 American Institute of Physics.
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页码：218 / 220
页数：3
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