Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN

被引：20

作者：

Zhao, ZM ^{[1
]}

Jiang, RL ^{[1
]}

Chen, P ^{[1
]}

Xi, DJ ^{[1
]}

Yu, HQ ^{[1
]}

Shen, B ^{[1
]}

Zhang, R ^{[1
]}

Shi, Y ^{[1
]}

Gu, SL ^{[1
]}

Zheng, YD ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.1385189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al and Ti/Al/Pt/Au ohmic contacts on GaN epitaxial layers were studied. The epilayers were grown on Si (111) substrates by low-pressure metalorganic chemical vapor deposition. Al/GaN contacts achieved a minimum contact resistivity of 7.5x10(-3) Omega cm(2) after annealing in N-2 ambient at 450 degreesC for 3 min. Further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved a minimum contact resistivity of 8.4x10(-5) Omega cm(2) after annealing in N-2 at 650 degreesC for 20 s. The Ti/Al/Pt/Au contacts on GaN showed a better thermal stability than Al/GaN contacts. After annealing at 600 degreesC for 30 min. they were still ohmic contacts. The mechanisms for ohmic contact formation of Ti/Al/Pt/Au contacts were also analyzed. (C) 2001 American Institute of Physics.

引用

页码：218 / 220

页数：3

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