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Hydrogen-assisted molecular-beam epitaxy of ZnO layers on Zn-polar ZnO

被引：0
|
作者：
Suzuki, H. [1 ]
Minegishi, T. [1 ]
Park, S. H. [1 ]
Cho, M. W. [2 ]
Yao, T. [1 ,2 ]
机构：
[1] Tohoku Univ, Ctr Interdisciplinary Res, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674283
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogen-assisted molecular beam epitxy of ZnO on Zn-polar ZnCi is achieved using atomic hydrogen. Exposure of atomic H helps to grow high-quality ZnCi layers on Zn-polar ZnO substrates even at a low temperature of 400 degrees C. The full width at half maximum values of X-ray rocking curves for ZnO epilayers are as narrow as 64 arcsec and 60 aresec for (0002) and (10-11) diffractions. (c) 2007 WiLEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1685 / +
页数：2
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