Hydrogen-assisted molecular-beam epitaxy of ZnO layers on Zn-polar ZnO

被引：0
|
作者：
Suzuki, H. [1 ]
Minegishi, T. [1 ]
Park, S. H. [1 ]
Cho, M. W. [2 ]
Yao, T. [1 ,2 ]
机构：
[1] Tohoku Univ, Ctr Interdisciplinary Res, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674283
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogen-assisted molecular beam epitxy of ZnO on Zn-polar ZnCi is achieved using atomic hydrogen. Exposure of atomic H helps to grow high-quality ZnCi layers on Zn-polar ZnO substrates even at a low temperature of 400 degrees C. The full width at half maximum values of X-ray rocking curves for ZnO epilayers are as narrow as 64 arcsec and 60 aresec for (0002) and (10-11) diffractions. (c) 2007 WiLEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1685 / +
页数：2
相关论文
共 50 条
  • [1] Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy
    Park, S. H.
    Minegishi, T.
    Lee, H. J.
    Park, J. S.
    Im, I. H.
    Yao, T.
    Oh, D. C.
    Taishi, T.
    Yonenaga, I.
    Chang, J. H.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (09)
  • [2] High-quality ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy
    Kato, H
    Sano, M
    Miyamoto, K
    Yao, T
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03): : 612 - 615
  • [3] Plasma-assisted molecular beam epitaxy of high optical quality MgZnO films on Zn-polar ZnO substrates
    Nishimoto, Yoshio
    Nakahara, Ken
    Takamizu, Daiju
    Sasaki, Atsushi
    Tamura, Kentaro
    Akasaka, Shunsuke
    Yuji, Hiroyuki
    Fujii, Tetsuo
    Tanabe, Tetsuhiro
    Takasu, Hidemi
    Tsukazaki, Atsushi
    Ohtomo, Akira
    Onuma, Takeyoshi
    Chichibu, Shigefusa F.
    Kawasaki, Masashi
    [J]. APPLIED PHYSICS EXPRESS, 2008, 1 (09) : 0912021 - 0912023
  • [4] Homoepitaxial growth of high-quality Zn-polar ZnO films by plasma-assisted molecular beam epitaxy
    Kato, H
    Sano, M
    Miyamoto, K
    Yao, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (8B): : L1002 - L1005
  • [5] ATOMIC HYDROGEN-ASSISTED GAAS MOLECULAR-BEAM EPITAXY
    OKADA, Y
    SUGAYA, T
    OHTA, S
    FUJITA, T
    KAWABE, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01): : 238 - 244
  • [6] Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
    Ding, Kai
    Avrutin, Vitaliy
    Izioumskaia, Natalia
    Ullah, Barkat
    Ozgur, Umit
    Morkoc, Hadis
    [J]. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2018, (140):
  • [7] GROWTH MODES IN ATOMIC HYDROGEN-ASSISTED MOLECULAR-BEAM EPITAXY OF GAAS
    OKADA, Y
    FUJITA, T
    KAWABE, M
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (05) : 676 - 678
  • [8] ELEMENTARY PROCESSES IN ATOMIC HYDROGEN-ASSISTED GAAS MOLECULAR-BEAM EPITAXY
    OKADA, Y
    FUJITA, T
    KAWABE, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (6B): : L768 - L771
  • [9] SELECTIVE GROWTH AND OTHER APPLICATIONS OF HYDROGEN-ASSISTED MOLECULAR-BEAM EPITAXY
    KAWABE, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 370 - 376
  • [10] Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxy
    Minegishi, T
    Yoo, J
    Suzuki, H
    Vashaei, Z
    Inaba, K
    Shim, K
    Yao, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1286 - 1290
12345