Phase Stability, Electronic, and Optical Properties in Pcca, R3c, and Pm-3m Phases of BiGaO3 Perovskite

被引:4
|
作者
Krache, Lahcene [1 ]
Ghebouli, Mohamed Amine [2 ,3 ]
Ghebouli, Brahim [4 ]
Alomairy, Sultan [5 ]
Reffas, Mounir [3 ]
Fatmi, Messaoud [3 ]
Chihi, Tayeb [3 ]
机构
[1] Univ Ferhat Abbas Setif 1, PQSD Lab, Dept Phys, Fac Sci, Setif 19000, Algeria
[2] Univ Mohamed Boudiaf, Dept Chem, Fac Technol, Msila 28000, Algeria
[3] Univ Ferhat Abbas Setif 1, Res Unit Emerging Mat RUEM, Setif 19000, Algeria
[4] Univ Ferhat Abbas Setif 1, Lab Studies Surfaces & Interfaces Solids Mat, Dept Phys, Fac Sci, Setif 19000, Algeria
[5] Taif Univ, Dept Phys, Coll Sci, POB 11099, At Taif 21944, Saudi Arabia
来源
关键词
band structures; BiGaO3; perovskites; optical absorption; Pcca phases; R3c phases; HIGH-PRESSURE;
D O I
10.1002/pssb.202200042
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using generalized gradient approximation (GGA) and local density approximation (LDA), the phase stability, electronic, and optical characteristics of BiGaO3 in the Pcca, R3c, and Pm-3m phases are examined. The structural phase transition can be caused by the few soft modes between F and Z points in the R3c phase. Because it is coupled to isotropic deformation, the bulk modulus of BiGaO3 is an indicator of its high hardness. When electrons travel from the top of the valence band (O-2p) to the bottom of the conduction band (Ga-4p or Bi-6p), optical transitions are detected. The pyroxene Pcca phase of BiGaO3 is the most stable, according to GGA-Perdew-Burke-Ernzerhof (PBE) total energy calculations. At 5 GPa, the phase change from the Pcca to the R3c structure occurs. Because of the smaller reticular lengths and higher Coulomb forces, the elastic constants of BiGaO3 are quite significant.
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Anomalies of the pyroelectric and dielectric properties of ferroelectric ceramics of the PbZr1-xTixO3 system with 0.06 ≤ x ≤ 0.35 at the R3c ↔ R3m phase transition
    Zakharov Yu.N.
    Lutokhin A.G.
    Korchagina N.A.
    Kuznetsov V.G.
    Bull. Russ. Acad. Sci. Phys., 2008, 4 (556-558): : 556 - 558
  • [22] STRUCTURAL PHASE-TRANSITIONS IN CRYSTALS OF R3C SYMMETRY
    HATCH, DM
    PHYSICAL REVIEW B, 1981, 23 (05): : 2346 - 2349
  • [23] HIGH-PRESSURE STATIC AND DYNAMIC PROPERTIES OF THE R3C PHASE OF SOLID NITROGEN
    ETTERS, RD
    CHANDRASEKHARAN, V
    UZAN, E
    KOBASHI, K
    PHYSICAL REVIEW B, 1986, 33 (12): : 8615 - 8621
  • [24] The electronic and optical properties of CH3NH3MoI3 Perovskite
    Kansara, Shivam
    Sonvane, Yogesh
    Gupta, Sanjeev K.
    INTERNATIONAL CONFERENCE ON NANOMATERIALS FOR ENERGY CONVERSION AND STORAGE APPLICATIONS (NECSA 2018), 2018, 1961
  • [25] Optical properties, energy band gap and the charge carriers' effective masses of the R3c BiFeO3 magnetoelectric compound
    Lima, A. F.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2020, 144 (144)
  • [26] A TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE R3M-]R3C PHASE-TRANSITION IN PB(ZR,TI)O3 CERAMICS
    RANDALL, CA
    MATSKO, MG
    CAO, W
    BHALLA, AS
    SOLID STATE COMMUNICATIONS, 1993, 85 (03) : 193 - 195
  • [27] CsCl (B2, Pm-3m) phase of lead chalcogenides and their ternary alloys: A computational study
    Demiray, Ferhat
    Berber, Savas
    MATERIALS CHEMISTRY AND PHYSICS, 2020, 255
  • [28] First Principles Calculation on Elastic, Electronic and Optical Properties of new cubic (Pm3m) Pb-free Perovskite Oxide of SnZrO3
    Taib, M. F. M.
    Yaakob, M. K.
    Hassan, O. H.
    Yahya, M. Z. A.
    IEEE SYMPOSIUM ON BUSINESS, ENGINEERING AND INDUSTRIAL APPLICATIONS (ISBEIA 2012), 2012, : 13 - 17
  • [29] DFT study of electronic and optical properties of CH3NH3SnI3 perovskite
    Sabetvand, Roozbeh
    Ghazi, Mohammad Ebrahim
    Izadifard, Morteza
    ENERGY SOURCES PART A-RECOVERY UTILIZATION AND ENVIRONMENTAL EFFECTS, 2020, 46 (01) : 13778 - 13790
  • [30] Effect of pressure-induced structural phase transition on electronic and optical properties of perovskite CH3NH3PbI3
    Jiang, Haiyan
    Xue, Hongtao
    Wang, Lifu
    Tang, Fuling
    Si, Fengjuan
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 96 : 59 - 65