Weak antilocalization in a GaAs quantum well in the presence of a strong in-plane magnetic field

被引：0
|
作者：
Desrat, W. [1 ]
Maude, D. K. [1 ]
Wasilewski, Z. R. [2 ]
Airey, R. [3 ]
Hill, G. [3 ]
机构：
[1] Genoble High Magnet Field Lab, Ctr Natl Rech Sci, BP 166, F-38042 Grenoble 9, France
[2] CNR, Inst Micro struct Sci, Ottawa, ON K1A 0R6, Canada
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield, S Yorkshire SI 4DU, England
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
weak antilocalisation; spin-orbit coupling; dresselhaus mechanism;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report low-field magnetoresistance measurements performed on a GaAs/AlGaAs quantum well with a strong in-plane magnetic field (beta(parallel to)). As the parallel magnetic field increases, the weak antilocalisation is destroyed. This is folllowed by the suppression of the weak localisation at higher fields. We find that the spin relaxation time tau(so) remains constant as a function of B-parallel to whereas the dephasing rate tau(-1)(phi) is proportional to the parallel field squared.
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页码：551 / +
页数：2
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