InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

被引：0
|
作者：
Wu, LW [1 ]
Chang, SJ
Su, YK
Tsai, TY
Wen, TC
Kuo, CH
Lai, WC
Sheu, JK
Tsai, JM
Chen, SC
Huang, BR
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan
[3] S Epitaxy Corp, Tainan 744, Taiwan
[4] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan
[5] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Taiwan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 05期
关键词：
InGaN/GaN; short-period superlattice (SPS); multiple-quantum well (MQW); light-emitting diode (LED);
D O I：
10.1007/s11664-003-0168-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nitride-based light-emitting diodes (LEDs) with Si-doped n(+)-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 x 10(-2) Omega-cm(2) for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 x 10(0) Omega-cm(2) for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.
引用
收藏
页码：411 / 414
页数：4
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