Van der Waals Integration Based on Two-Dimensional Materials for High-Performance Infrared Photodetectors

被引:175
|
作者
Wang, Haoyun [1 ]
Li, Zexin [1 ]
Li, Dongyan [1 ]
Chen, Ping [1 ]
Pi, Lejing [1 ]
Zhou, Xing [1 ,2 ]
Zhai, Tianyou [1 ]
机构
[1] Huazhong Univ Sci & Technol HUST, State Key Lab Mat Proc & & Mould Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
band engineering; heterostructures; infrared photodetectors; two-dimensional materials; Van der Waals integration; BROAD-BAND PHOTODETECTOR; HIGH-RESPONSIVITY; ROOM-TEMPERATURE; SELF-DRIVEN; MIDINFRARED PHOTODETECTION; GRAPHENE PHOTODETECTORS; PHOTOVOLTAIC DETECTORS; MOS2/SI HETEROJUNCTION; METAL DICHALCOGENIDE; EPITAXIAL-GROWTH;
D O I
10.1002/adfm.202103106
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Infrared photodetectors have been widely applied in various fields, induding thermal imaging, biomedical imaging, and communication. Van der Waals (vdW) integration based on 2D materials provides a new solution for high-performance infrared photodetectors due to the versatile device configurations and excellent photoelectric properties. In recent years, great progress has been made in infrared photodetectors based on vdW integration. In this review, recent progress in vdW integration-based infrared photodetectors is presented. First, the working mechanisms and advantages of photodetectors with different structures and band alignments are presented. Then, the recent progress of vdW integration-based infrared photodetectors is reviewed, focusing on 2D/nD (n = 0, 1, 2, 3) vdW integration, and the band engineering as well as the performance of the photodetectors are discussed in detail. Finally, a summary is delivered, and the challenges and future directions of vdW integration-based infrared photodetectors are provided.
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页数:23
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