A 0.18-μm CMOS UWB low noise amplifier for full-band (3.1-10.6GHz) application

被引：0

作者：

Wang, Ruey-Lue ^{[2
]}

Chen, Shih-Chih ^{[1
]}

Kuo, Hsiang-Chen ^{[1
]}

Liu, Chien-Hsuan ^{[3
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Dept Optoelect Engn, Touliu 64002, Yunlin, Taiwan

[2] Natl Kaohsiung Marine Univ Sci & Technol, Dept Microelect Engn, Kaohsiung, Taiwan

[3] Natl Chung Cheng Univ, Inst Microelect, Tainan, Taiwan

来源：

2006 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS | 2006年

关键词：

low-noise amplifier (LNA); ultra-wideband (UWB); RLC shunt-series feedback;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The paper presents the design of a band group 1-5 UWB low noise amplifier in the range between 3.1 to 10.6GHz. The circuit consists of a two-stage topology to implement a low noise amplifier based on the TSMC 0.18-um RF CMOS process. The first stage is the folded cascode configuration that is used to attain low-power dissipation and low supply voltage. Negative feedback is adopted to enhance the bandwidth of the first stage. In order to achieve simultaneously a high gain and ultra-wide bandwidth, the addition of a common-source stage behind the folded cascode circuit provides extra gain and gain flatness. A RLC shunt-shunt feedback is used to attain the broadband gain requirement of the second stage. The simulated results show the better performances of S21 above 12dB and noise finger below 3.6dB with the 3-dB bandwidth covering from 3.1GHz to 10.6GHz. The first-stage circuit of LNA drains 22mA from a 0.9V supply and the second-stage circuit of LNA drains 8mA from a 0.85V supply voltage. The total circuit consumes a very low power of 27mW. The chip area is 1.195mmxl.275 mm.

引用

页码：363 / +

页数：2

共 50 条

[31] Design and implementation of a 1–5 GHz UWB low noise amplifier in 0.18 μm CMOS
Ming Shen
Tian Tong
Jan H. Mikkelsen
Ole K. Jensen
Torben Larsen
Analog Integrated Circuits and Signal Processing, 2011, 67 : 41 - 48
[32] A High Linearity and Low Power 3.1-10.6GHz CMOS Up-Conversion Mixer for UWB Applications
Du, Sichun
Huang, Wenbin
Wang, Chunhua
Zhang, Guangxiang
Zhang, Jianguo
WIRELESS PERSONAL COMMUNICATIONS, 2013, 70 (04) : 1623 - 1632
[33] A CMOS power amplifier for full-band UWB transmitters
Lu, Chao
Pham, Anh-Vu
Shaw, Michael
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 445 - +
[34] A CMOS power amplifier for full-band UWB transmitters
Lu, Chao
Pham, Anh-Vu
Shaw, Michael
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2006, : 397 - 400
[35] A 3.1-10.6 GHz CMOS Two Stage Cascade Topology Low-Noise Amplifier for UWB System
Gautam, Neelam
Kumar, Manish
Chaturvedi, Abhay
2014 FOURTH INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS AND NETWORK TECHNOLOGIES (CSNT), 2014, : 1070 - 1073
[36] A CMOS 3.1-10.6GHz UWB LNA employing stagger-compensated series peaking
Shekhar, S.
Li, X.
Allstot, D. J.
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2006, : 49 - 52
[37] Low Group Delay 3.1-10.6 GHz CMOS Power Amplifier for UWB Applications
Sapawi, Rohana
Pokharel, Ramesh K.
Murad, Sohiful A. Z.
Anand, Awinash
Koirala, Nishal
Kanaya, H.
Yoshida, K.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2012, 22 (01) : 41 - 43
[38] A CMOS 3.1-10.6GHz UWB LNA employing stagger-compensated series peaking
Shekhar, S.
Li, X.
Allstot, D. J.
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 63 - +
[39] CMOS 0.18-μm INTEGRATED POWER AMPLIFIER FOR UWB SYSTEMS
Makarov, D. G.
Krizhanovskii, V. V.
Shu, Chang
Krizhanovskii, V. G.
2008 4TH INTERNATIONAL CONFERENCE ON ULTRAWIDEBAND AND ULTRASHORT IMPULSE SIGNALS, PROCEEDINGS, 2008, : 153 - +
[40] Design of a 3.1-10.6GHz low-voltage, low-power CMOS low-noise amplifier for ultra-wideband receivers
Chang, Bo-Yang
Jou, Christina F.
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, : 1066 - 1069

← 1 2 3 4 5 →