Self-limiting process for the bismuth content in molecular beam epitaxial growth of Bi2Sr2CuOy thin films

被引：36

作者：

Migita, S ^{[1
]}

Kasai, Y ^{[1
]}

Ota, H ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 25期

关键词：

D O I：

10.1063/1.120490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technology utilizing a self-limiting mechanism for the Bi content is demonstrated for Bi2Sr2CuOy (2201) thin film growth by an atomic layer controlled molecular beam epitaxy. This technology is based on peculiar behavior of the Bi sticking coefficient that depends on the kinds of oxide thin films to be grown. When Bi atoms are supplied in excess with ozone molecular beam, only Bi atoms. being necessary for forming the structural unit (2201 half unit cell), an just incorporated in the film. Surplus Bi is reevaporated from the surface, Using this technique, high quality 2201 thin films an obtained with good reproducibility. (C) 1997 American Institute of Physics. [S0003-6951(97)04051-5].

引用

页码：3712 / 3714

页数：3

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