Analysis of Crystallization Processes on the Surface of Ge-Ga-Se Glasses for Electronics and IR Photonics

被引：0
|
作者：
Klym, Halyna [1 ]
Kostiv, Yuriy [2 ]
Karbovnyk, Ivan [3 ]
Vasylchyshyn, Ivanna [4 ]
机构：
[1] Lviv Polytech Natl Univ, Specialized Comp Syst Dept, Lvov, Ukraine
[2] Lviv Polytech Natl Univ, Informat Technol Secur Dept, Lvov, Ukraine
[3] Ivan Franko Natl Univ Lviv, Elect & Comp Technol Dept, Lvov, Ukraine
[4] Lviv Polytech Natl Univ, Theoret & Gen Elect Engn Dept, Lvov, Ukraine
来源：
2018 IEEE 38TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2018年
关键词：
glasses; crystallization; surface; atomic force microscopy; PHASE-DIAGRAM; FREE-VOLUME; SYSTEM;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface crystallization processes in the 80GeSe(2)-20Ga(2)Se(3) chalcogenide glasses annealed at 380 degrees C for 25 h and 80 h were studied using atomic force microscopy method. It is shown that crystallites of GeSe2 phase are formed in the crystallized glasses on the surface. Optimal conditions of crystallization process were selected for preparation of glasses for IR photonics and sensor electronics.
引用
收藏
页码：152 / 155
页数：4
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