Controllable crystallization and enhanced amorphous stability of Sb-Te films modified by Ag-doping

被引：1
|
作者：
Zhong, Juechen [1 ,2 ]
Luo, Yang [1 ,2 ]
Gu, Ting [1 ,2 ]
Wang, Zhenglai [1 ,2 ]
Jiang, Kefeng [1 ,2 ]
Wang, Guoxiang [1 ,2 ]
Lu, Yegang [1 ,2 ]
机构：
[1] Ningbo Univ, Adv Technol Res Inst, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China
[2] Key Lab Photoelect Detect Mat & Devices Zhejiang, Ningbo 315211, Zhejiang, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2016年 / 3卷 / 10期
基金：
中国国家自然科学基金;
关键词：
thin films; crystal structure; thermal properties; electrical properties; DOPED GE2SB2TE5; PHASE;
D O I：
10.1088/2053-1591/3/10/106409
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ag-doped Sb-Te films were deposited by magnetron co-sputtering and the structure, electrical, optical and thermal properties were analyzed. The results show that Ag-doping restrains crystal grain size, and changes a preferred orientation of the crystalline phase. The crystallization temperature is increased due to the Ag addition. Both amorphous resistance and crystalline resistance are enhanced and the resistance ratio reaches similar to 10(4). Compared with Ge2Sb2Te5, Ag-26.82(Sb3Te)(73.18) film exhibits a better amorphous thermal stability, a higher crystallization temperature (similar to 166 degrees C), a wider optical band gap (0.515 eV), a larger crystallization activation energy (3.17 eV) as well as a better 10 years data retention at 92 degrees C.
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页数：8
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