Evaluation of first crystallization in amorphous Ag-added Ag5.5In6.5Sb59Te29 thin films

被引:3
|
作者
Song, Ki-Ho [1 ]
Seo, Jae-Hee [1 ]
Kim, Jun-Hyong [1 ]
Lee, Hyun-Yong [1 ]
机构
[1] Chonnam Natl Univ, Fac Appl Chem Engn, Kwangju 500757, South Korea
关键词
amorphous semiconductors; antimony compounds; crystallisation; indium compounds; infrared spectra; semiconductor growth; semiconductor thin films; silver compounds; ultraviolet spectra; vacuum deposition; visible spectra; X-ray diffraction; PHASE-CHANGE MEDIA; IN-SB-TE; NONVOLATILE MEMORY; AGINSBTE FILMS; OPTICAL DISK; KINETICS; NUCLEATION;
D O I
10.1063/1.3273400
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, several experimental results were reported for the evaluation of the first crystallization speed (v(1st)) on the nanosecond time scale as well as the material characteristics of the Ag-added Ag-In-Sb-Te films. The (Ag)(x)(Ag5.5In6.5Sb59Te29)(1-x) (x=0, 0.1, and 0.2) films were prepared by thermal evaporation and their phase transformation from an amorphous state to a hexagonal structure via a stable fcc structure was confirmed using x-ray diffraction. Some differences were measured in the optical transmittance (T-OP) and absorption between the amorphous and crystalline films in the wavelength (lambda) range of 800-3000 nm using an UV-visible-IR spectrophotometer. The v(1st) values, evaluated using nanopulse reflection response, slightly improved with an increase in the Ag content. For example, the nucleation time/average growth time ratio for the Ag5.5In6.5Sb59Te29 and Ag-0.2(Ag5.5In6.5Sb59Te29)(0.8) films were approximately 170 ns/70 ns and 110 ns/60 ns, respectively, for an illumination power of 7 mW.
引用
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页数:6
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