Comparison of AIN encapsulants for high-temperature GaN annealing

被引：10

作者：

Greenlee, Jordan D. ^{[1
]}

Anderson, Travis J. ^{[2
]}

Feigelson, Boris N. ^{[2
]}

Hite, Jennifer K. ^{[2
]}

Bussmann, Konrad M. ^{[2
]}

Eddy, Charles R., Jr. ^{[2
]}

Hobart, Karl D. ^{[2
]}

Kub, Francis J. ^{[2
]}

机构：

[1] US Navy, Res Lab, Natl Res Council Postdoctoral Fellow Residing, Washington, DC 20375 USA

[2] Naval Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 12期

关键词：

ALN ENCAPSULANT; ACTIVATION; GROWTH;

D O I：

10.7567/APEX.7.121003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Four different capping structures for high-temperature annealing of GaN were studied. The studied caps included a two-layer MOCVD-deposited cap and three different MOCVD + sputtered layer capping structures. After an annealing pulse of 1500 degrees C, the MOCVD cap surface roughened due to decomposition of the underlying GaN. GaN decomposition was evident via observation of thermal decomposition pits after etching of the AIN caps. It was found that the combination of an MOCVD cap with a sputtered cap greatly reduced the amount of GaN decomposition as the density of thermal etch pits decreased by 99.4%. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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