Photoluminescence and Raman study of iron-passivated porous silicon

被引：17
|
作者：
Mavi, HS [1 ]
Rasheed, BG [1 ]
Shukla, AK [1 ]
Soni, RK [1 ]
Abbi, SC [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 97卷 / 03期
关键词：
porous silicon; photoluminescence; Raman spectroscopy; passivation;
D O I：
10.1016/S0921-5107(02)00594-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Degradation of porous silicon (PS) fabricated by laser-induced etching was studied using photoluminescence (PL) and Raman spectroscopy. Freshly prepared samples were given a heat treatment in hydrofluoric acid plus ferric nitrate solution to produce ironpassivated porous silicon (IPS) samples. PL measurements on IPS show different peak positions and widths as compared to freshly prepared non-passivated PS samples. Results were analyzed using a quantum confinement model. Exposing IPS to air for more than 4 months resulted in no degradation of PL intensity or changes in the peak position and size distribution. Raman spectra of IPS also revealed changes in line-shape asymmetry in comparison to freshly prepared non-passivated PS samples. The data were explained using the phonon confinement in two-dimensions. There is good agreement between PL and Raman data for the size of nanocrystallites participating in iron-passivation. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：239 / 244
页数：6
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