Influence of random potential fluctuations on the interwell radiative recombination in biased double quantum well

被引：16
|
作者：
Timofeev, VB [1 ]
Filin, AI
Larionov, AV
Zeman, J
Martinez, G
Hvam, JM
Birkedal, D
Sorensen, CB
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[2] Max Planck Inst Festkorperforsch, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France
[3] CNRS, F-38042 Grenoble 9, France
[4] Tech Univ Denmark, Ctr Microelect, DK-2800 Lyngby, Denmark
来源：
EUROPHYSICS LETTERS | 1998年 / 41卷 / 05期
关键词：
D O I：
10.1209/epl/i1998-00187-x
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A systematic study of the photoluminescence from double quantum well in p-i-n GaAs/AlGaAs/GaAs heterostructure under the influence of an external electric and magnetic field at different temperatures has been performed. The luminescence peak of the indirect recombination exhibits a dynamical narrowing when increasing the temperature from 10 to 20 K. This is explained by thermal delocalization of electrons and holes localized in the wells at lon temperatures due to the random potential fluctuations. This explanation is supported by time-resolved photoluminescence measurements of the different components of the spectra.
引用
收藏
页码：535 / 540
页数：6
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